CVD-二维类石墨烯产品-CVD-MoSe2 单层薄膜
产品照片:
This product contains MoSe2 monolayers on c-cut sapphire substrates. Please note that these MoSe2 monolayers do not reach full area coverage on sapphire or SiO2/Si samples. Sample size measures 1cm in size d the entire sample surface contains monolayer thick MoSe2 sheet. Synthesized monolayer MoSe2 is highly luminescent d Ram spectroscopy studies also confirm the monolayer thickness (please see the technical specifications), however few-layer regions are also ticipated to be observed.
Growth method: Our compy synthesizes these monolayers using chemical vapor deposition (CVD) using highest purity (6N) gases d precursors in semiconductor grade facilities to produce crystalline d large domain size samples (1-50um). This is unlike commonly used MOCVD process wherein defects are very very large d domain sizes are small (10nm-500nm). Our samples are always highly luminescent d highly crystallized
Sample Properties
Sample size | 1cm x 1cm square shaped |
Substrate type | (0001) c-cut sapphire |
Coverage | Does not reach full area coverage |
Electrical properties | 1.58 eV Direct Bdgap Semiconductor |
Crystal structure | Hexagonal Phase |
Unit cell parameters | a = b = 0.327 nm, c = 1.295 nm, α = β = 90°, γ = 120° |
Production method | Low pressure Chemical Vapor Deposition (LPCVD) |
Characterization methods | Ram, photoluminescence, TEM, EDS |
参数信息 | |
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外观状态: | 固体或粉末 |
质量指标: | 95%+ |
溶解条件: | 有机溶剂/水 |
CAS号: | N/A |
分子量: | N/A |
储存条件: | -20℃避光保存 |
储存时间: | 1年 |
运输条件: | 室温2周 |
生产厂家: | 上海金畔生物科技有限公司 |